IRF5210LPBF International Rectifier, IRF5210LPBF Datasheet - Page 7

• Manufacturer Part Number: IRF5210LPBF
• Description: MOSFET P-CH 100V 38A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5210LPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 38A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 230nC @ 10V
• Input Capacitance (ciss) @ Vds: 2780pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Channel Type: P
• Current, Drain: -40 A
• Gate Charge, Total: 180 nC
• Package Type: TO-262
• Polarization: P-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 0.06 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 79 ns
• Time, Turn-on Delay: 17 ns
• Transconductance, Forward: 10 S
• Voltage, Breakdown, Drain To Source: -100 V
• Voltage, Drain To Source: –100 V
• Voltage, Forward, Diode: -1.6 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 40 A
• Mounting Style: Through Hole
• Gate Charge Qg: 120 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Re-Applied
Voltage
Reverse
Recovery
Current
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Driver Gate Drive
D.U.T. I
D.U.T. V
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Body Diode
Period
Body Diode Forward
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Diode Recovery
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