IXTP90N15T IXYS, IXTP90N15T Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/3/352/ixys_sml.jpg)
IXTP90N15T
Manufacturer Part Number
IXTP90N15T
Description
MOSFET N-CH 150V 90A TO-220
Manufacturer
IXYS
Datasheet
1.IXTP90N15T.pdf
(6 pages)
Specifications of IXTP90N15T
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4.5V @ 1mA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
4100pF @ 25V
Power - Max
455W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.02 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
90 A
Power Dissipation
455 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
90
Rds(on), Max, Tj=25°c, (?)
0.02
Ciss, Typ, (pf)
4100
Qg, Typ, (nc)
80
Trr, Typ, (ns)
110
Trr, Max, (ns)
-
Pd, (w)
455
Rthjc, Max, (k/w)
0.33
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Note 1:
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
(T
S
SM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCH
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
J
J
= 25°C, unless otherwise specified)
= 25°C unless otherwise specified)
*
: Current may be limited by external terminal current limit.
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
TO-220
TO-3P, TO-263, TO-247
V
Repetitive
I
I
V
Test Conditions
F
F
PRELIMINARY TECHNICAL INFORMATION
DS
GS
GS
GS
GS
R
G
= 50A, V
=45A, -di/dt = 250A/μs
= 75V, V
= 10V, I
= 3.3Ω (External)
= 10V, V
= 0V, V
= 15V, V
= 0V
GS
D
DS
GS
DS
= 0.5 • I
DS
= 0V, Note 1
= 25V, f = 1MHz
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 25A
= 0.5 • I
5,049,961
5,063,307
5,187,117
D25
5,237,481
5,381,025
5,486,715
Min.
Characteristic Values
Characteristic Values
Min.
40
6,162,665
6,259,123 B1
6,306,728 B1
4100
560
0.25
0.21
110
Typ.
Typ.
92
24
22
44
19
80
20
20
69
0.33 °C/W
6,404,065 B1
6,534,343
6,583,505
300
Max.
1.2
90
Max.
°C/W
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
6,683,344
IXTA90N15T IXTH90N15T
IXTP90N15T IXTQ90N15T
6,710,405 B2 6,759,692
6,710,463
6,727,585
6,771,478 B2 7,071,537
7,005,734 B2
7,063,975 B2
7,157,338B2