IXTQ36N30P IXYS, IXTQ36N30P Datasheet - Page 4
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IXTQ36N30P
Manufacturer Part Number
IXTQ36N30P
Description
MOSFET N-CH 300V 36A TO-3P
Manufacturer
IXYS
Series
PolarHT™r
Datasheet
1.IXTP36N30P.pdf
(5 pages)
Specifications of IXTQ36N30P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
110 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2250pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.11 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
36 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
36
Rds(on), Max, Tj=25°c, (?)
0.11
Ciss, Typ, (pf)
2250
Qg, Typ, (nc)
70
Trr, Typ, (ns)
250
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTQ36N30P
Manufacturer:
IXYS
Quantity:
5 000
Company:
Part Number:
IXTQ36N30P
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXTQ36N30P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
100
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
10
0
0
4.5
0.4
0
0.5
T
f = 1MHz
J
5
5
= 125ºC
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
-40ºC
Fig. 9. Source Current vs.
0.6
Source-To-Drain Voltage
25ºC
5.5
T
10
J
= 125ºC
0.7
V
V
15
6
V
G S
S D
D S
0.8
- Volts
- Volts
6.5
20
- Volts
0.9
T
25
J
7
= 25ºC
1
7.5
30
1.1
C oss
C rss
C iss
35
1.2
8
1.3
8.5
40
1000
100
10
35
30
25
20
15
10
10
1
5
0
9
8
7
6
5
4
3
2
1
0
10
0
0
R
V
I
I
DS(on)
D
G
10
DS
= 18A
= 10mA
10
IXTA 36N30P IXTP 36N30P
Fig. 8. Transconductance
= 150V
20
Limit
Fig. 10. Gate Charge
Fig. 12. Forw ard-Bias
Safe Operating Area
20
Q
30
DC
G
I
- nanoCoulombs
V
D
30
D S
- Amperes
40
100
- Volts
50
40
IXTQ 36N30P
60
50
T
T
J
C
T
70
100µs
1ms
= 150ºC
10ms
25µs
J
= 25ºC
= -40ºC
125ºC
60
25ºC
80
1000
90
70