IXTA8N50P IXYS, IXTA8N50P Datasheet - Page 5

• Manufacturer Part Number: IXTA8N50P
• Description: MOSFET N-CH 500V 8A D2-PAK
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTA8N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 5.5V @ 100µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 1050pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.8 Ohms
• Forward Transconductance Gfs (max / Min): 8 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 8.0
• Rds(on), Max, Tj=25°c, (?): 0.8
• Ciss, Typ, (pf): 1050
• Qg, Typ, (nc): 20
• Trr, Typ, (ns): 400
• Pd, (w): 150
• Rthjc, Max, (k/w): 0.83
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTA 8N50P
IXTP 8N50P
Fig. 13. M axim um Trans ie nt The rm al Re s is tance
1.00
0.10
0.001
0.01
0.1
1
10
Pulse Width - Seconds
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IXYS REF: T_8N50P (37) 03-21-06-A.XLS