IXTP3N50D2 IXYS, IXTP3N50D2 Datasheet - Page 4

• Manufacturer Part Number: IXTP3N50D2
• Description: MOSFET N-CH 500V 3A TO200AB
• Manufacturer: IXYS

Specifications of IXTP3N50D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 0V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3A
• Gate Charge (qg) @ Vgs: 40nC @ 5V
• Input Capacitance (ciss) @ Vds: 1070pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Vds, Max, (v): 500
• Id(on), Min, (a): 3
• Rds(on), Max, (?): 1.5
• Vgs(off), Max, (v): -4
• Ciss, Typ, (pf): 1070
• Crss, Typ, (pf): 24
• Qg, Typ, (nc): 40
• Pd, (w): 125
• Rthjc, Max, (ºc/w): -
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1.4
1.3
1.2
1.1
1.0
0.9
0.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
9
8
7
6
5
4
3
2
1
0
-3.5
-50
-50
V
I
Fig. 7. Normalized R
V
GS
D
DS
-3.0
= 1.5A
= 0V
-25
-25
= 30V
Fig. 11. Breakdown and Threshold Voltages
-2.5
0
0
vs. Junction Temperature
T
Fig. 9. Input Admittance
T
-2.0
J
J
- Degrees Centigrade
- Degrees Centigrade
25
25
V
T
DS(on)
GS
J
-1.5
= 125ºC
V
- Volts
- 40ºC
GS(off)
25ºC
50
50
vs. Junction Temperature
@ V
-1.0
DS
75
75
= 25V
BV
-0.5
DSX
@ V
100
100
GS
0.0
= - 5V
125
125
0.5
150
1.0
150
3.0
2.6
2.2
1.8
1.4
1.0
0.6
10
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0.4
0
0
V
V
GS
V
DS
GS
1
1
= -10V
= 30V
= 0V
Fig. 8. R
5V
0.5
2
2
- - - -
Fig. 12. Forward Voltage Drop of
DS(on)
Fig. 10. Transconductance
3
3
T
T
J
J
= 25ºC
vs. Drain Current
= 125ºC
Normalized to I
I
I
Intrinsic Diode
0.6
D
D
4
4
V
- Amperes
- Amperes
SD
T
J
= 125ºC
- Volts
5
5
0.7
6
6
D
IXTP3N50D2
IXTA3N50D2
= 1.5A Value
7
7
T
0.8
J
8
8
= 25ºC
T
J
= - 40ºC
125ºC
9
9
25ºC
0.9
10
10