STB100NF03L-03T4 STMicroelectronics, STB100NF03L-03T4 Datasheet - Page 4

• Manufacturer Part Number: STB100NF03L-03T4
• Description: MOSFET N-CH 30V 100A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB100NF03L-03T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 88nC @ 5V
• Input Capacitance (ciss) @ Vds: 6200pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0032 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 100 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7929-2; STB100NF03L-03T4

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
C
I
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
STB100NF03L-03 - STB100NF03L-03-1 - STP100NF03L-03
I
V
V
T
V
V
V
V
V
I
V
V
V
R
(see
V
V
(see
D
D
C
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
DD
G
= 250µA, V
= 30A
= 125°C
Test conditions
= 4.7Ω V
Test conditions
>I
= max ratings
= max ratings,
= ± 16V
= V
= 10V, I
= 4.5V, I
= 25V, f = 1MHz,
= 0
= 15V, I
= 24V, I
= 5V
Figure
Figure
D(on)
GS
, I
xR
13)
14)
D
GS
D
D
D
D
DS(on)
GS
= 50A
= 50A
= 100A,
= 250µA
= 50A
= 4.5V
=0
max
,
Min.
Min.
30
10
1
0.0026
0.0032
6200
1720
Typ.
Typ.
22.5
300
315
115
1.7
35
95
88
36
0.0032
0.0045
Max.
Max.
±100
2.5
10
1
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
V
V
Ω
Ω