STP20NF20 STMicroelectronics, STP20NF20 Datasheet - Page 3

• Manufacturer Part Number: STP20NF20
• Description: MOSFET N-CH 200V 18A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP20NF20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 940pF @ 25V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 125mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.125 Ohms
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 72 A
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5812-5

STD20NF20, STF20NF20, STP20NF20
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2. I
Table 3.
1. When mounted on 1inch² FR-4, 2 Oz copper board.
Table 4.
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt
SD
I
P
DM
V
E
V
V
T
I
AR
I
I
TOT
T
T
ISO
DS
GS
stg
≤ 18 A, di/dt ≤ 400 A/µs, V
AS
D
D
l
j
(1)
(2)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; Tc = 25 °C)
Storage temperature
Max. operating junction temperature
j
= 25 °C, I
DD
Parameter
Parameter
Parameter
Doc ID 13154 Rev 4
≤ V
D
C
(BR)DSS
= 25 °C
= I
GS
AR
= 0)
, V
DD
C
C
= 25 °C
= 100 °C
= 50 V)
j
max)
TO-220
TO-220, DPAK
1.38
62.5
0.72
110
Max value
-55 to 175
DPAK
50
1.38
Value
± 20
110
200
18
18
11
72
15
(1)
TO-220FP
Electrical ratings
TO-220FP
2500
0.2
30
62.5
300
5
W/°C
°C/W
°C/W
Unit
Unit
V/ns
Unit
mJ
°C
°C
W
A
V
V
A
A
A
V
3/15