IXTP06N120P IXYS, IXTP06N120P Datasheet - Page 4

• Manufacturer Part Number: IXTP06N120P
• Description: MOSFET N-CH 1200V 600MA TO-220
• Manufacturer: IXYS
• Series: PolarVHV™r

Specifications of IXTP06N120P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 32 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 600mA
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 13.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 Ohms
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.6 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1200
• Id(cont), Tc=25°c, (a): 0.6
• Rds(on), Max, Tj=25°c, (?): 34
• Ciss, Typ, (pf): 236
• Qg, Typ, (nc): 13.3
• Trr, Typ, (ns): 900
• Pd, (w): 42
• Rthjc, Max, (k/w): 3.0
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10.0
1.0
0.1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
0
9
8
7
6
5
4
3
2
1
0
0.1
0
0
V
I
I
D
G
DS
= 0.3A
= 1mA
= 600V
2
0.1
Fig. 7. Transconductance
4
Q
Fig. 9. Gate Charge
0.2
G
- NanoCoulombs
I
D
- Amperes
6
0.3
1
8
T
Fig. 11. Maximum Transient Thermal Impedance
J
= - 40ºC
0.4
T
10
J
= 25ºC
T
J
= 125ºC
0.5
12
Pulse Width - Second
0.6
14
10
1,000
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
100
10
1
0
1
0.4
0
f = 1 MHz
0.45
5
Fig. 8. Forward Voltage Drop of
0.5
10
0.55
Fig. 10. Capacitance
T
Intrinsic Diode
J
15
= 125ºC
0.6
V
V
SD
DS
100
- Volts
- Volts
0.65
20
C iss
C oss
C rss
0.7
IXYS REF: T_06N120P (1A) 11-08-06-A
25
IXTA06N120P
IXTP06N120P
0.75
30
0.8
T
J
= 25ºC
35
0.85
1000
0.9
40