STB200NF04-1 STMicroelectronics, STB200NF04-1 Datasheet - Page 2

MOSFET N-CH 40V 120A I2PAK

STB200NF04-1

Manufacturer Part Number
STB200NF04-1
Description
MOSFET N-CH 40V 120A I2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STB200NF04-1

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.7 mOhm @ 90A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
210nC @ 10V
Input Capacitance (ciss) @ Vds
5100pF @ 25V
Power - Max
310W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-3512-5

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Price
Part Number:
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0
STP200NF04 - STB200NF04 - STB200NF04-1
2/15
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) I
(2) Starting T
(#) Current Limited by Package
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (T
Table 5: On/Off
Rthj-case
Rthj-amb
V
Rthj-pcb
Symbol
Symbol
dv/dt (1)
SD
R
E
V
I
(BR)DSS
V
I
I
DM
P
I
I
DS(on)
V
V
D
D
AS
GS(th)
T
DSS
GSS
DGR
TOT
T
T
DS
GS
stg
(#)
(#)
120A, di/dt 500A/µs, V
j
l
( )
(2)
j
= 25°C, I
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Operating Junction Temperature
Storage Temperature
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
Thermal Resistance Junction-ambient (Free air) Max
Maximum Lead Temperature For Soldering Purpose
d
= 60A, V
Parameter
DS
DD
DD
= 0)
=30 V
V
GS
(BR)DSS
= 0)
Parameter
C
GS
= 25°C
GS
, T
= 20 k )
j
= 0)
T
CASE
C
C
JMAX.
= 25°C
= 100°C
I
V
V
V
V
V
D
DS
DS
GS
DS
GS
= 250 µA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= Max Rating
= Max Rating, T
= ± 20V
= V
= 10V, I
Test Conditions
GS
, I
D
D
= 90 A
GS
= 250µA
= 0
C
= 125 °C
TO-220 / I
(see Figure 17)
Min.
-55 to 175
40
2
Value
± 20
2.07
120
120
480
310
1.5
1.3
2
40
40
0.48
62.5
300
PAK / D
Typ.
3.3
2
PAK
Max.
±100
3.7
10
1
4
W/°C
Unit
V/ns
°C/W
°C/W
°C/W
Unit
m
°C
µA
µA
nA
W
V
V
V
A
A
A
°C
J
V
V

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