STD16N65M5 STMicroelectronics, STD16N65M5 Datasheet - Page 6

MOSFET N-CH 650V 12A DPAK

STD16N65M5

Manufacturer Part Number
STD16N65M5
Description
MOSFET N-CH 650V 12A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheets

Specifications of STD16N65M5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
299 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1250pF @ 100V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.299 Ohm @ 10 V
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
12 A
Power Dissipation
90000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
12A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.27ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8774-2

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Electrical characteristics
2.1
6/17
Figure 2.
Figure 4.
Figure 6.
0.01
0.01
0.01
0.1
0.1
0.1
(A)
(A)
(A)
10
10
10
I
I
I
D
D
D
1
1
1
0.1
0.1
0.1
Electrical characteristics (curves)
Safe operating area for IPAK
Safe operating area for TO-220,
I²PAK, TO-247
Safe operating area for TO-220FP
1
1
1
Tj=150°C
Tc=25°C
Single pulse
10
10
10
Tc=25°C
Tj=150°C
Single pulse
Tj=150°C
Tc=25°C
Single pulse
100
100
100
V
V
V
DS
DS
DS
(V)
(V)
(V)
Doc ID 15210 Rev 2
100µs
100µs
100µs
10µs
1ms
10ms
10µs
1ms
10ms
10µs
1ms
10ms
AM08609v1
AM08610v1
AM08611v1
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for IPAK
Thermal impedance for TO-220,
I²PAK, TO-247
Thermal impedance for TO-220FP
STF/I/P/U/W16N65M5

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