STP15NK50ZFP STMicroelectronics, STP15NK50ZFP Datasheet - Page 6

• Manufacturer Part Number: STP15NK50ZFP
• Description: MOSFET N-CH 500V 14A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP15NK50ZFP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 340 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 106nC @ 10V
• Input Capacitance (ciss) @ Vds: 2260pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.34 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 50 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
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Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
STP15NK50Z - STP15NK50ZFP - STB15NK50Z - STB15NK50Z-1 -
I
I
di/dt = 100A/µs,
V
SD
SD
DD
=14A, V
=14A,
Test conditions
=29V, Tj=150°C
GS
=0
Min
Typ.
428
4.2
14
56
20
Max
1.6
Unit
µC
ns
A
A
V
A