IXTP300N04T2 IXYS, IXTP300N04T2 Datasheet - Page 4

• Manufacturer Part Number: IXTP300N04T2
• Description: MOSFET N-CH 40V 300A TO-220
• Manufacturer: IXYS
• Series: TrenchT2™r

Specifications of IXTP300N04T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 300A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 145nC @ 10V
• Input Capacitance (ciss) @ Vds: 10700pF @ 25V
• Power - Max: 480W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Vdss, Max, (v): 40
• Id(cont), Tc=25°c, (a): 300
• Rds(on), Max, Tj=25°c, (?): 0.0025
• Ciss, Typ, (pf): 10700
• Qg, Typ, (nc): 145
• Trr, Typ, (ns): 53
• Pd, (w): 480
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
320
280
240
200
160
120
180
160
140
120
100
1,000
80
40
80
60
40
20
100
0
0
0.3
3.0
0
0.4
f
= 1 MHz
5
3.5
Fig. 9. Forward Voltage Drop of
0.5
Fig. 7. Input Admittance
10
T
0.6
J
Fig. 11. Capacitance
= 150ºC
4.0
Intrinsic Diode
T
J
15
V
0.7
= 150ºC
GS
V
- 40ºC
V
25ºC
SD
DS
- Volts
4.5
0.8
- Volts
20
- Volts
0.9
T
J
25
= 25ºC
5.0
C oss
C iss
C rss
1.0
30
1.1
5.5
35
1.2
6.0
1.3
40
1,000
100
160
140
120
100
10
80
60
40
20
10
1
0
9
8
7
6
5
4
3
2
1
0
1
0
0
External Lead Current Limit
R
DS(
T
T
Single Pulse
Fig. 12. Forward-Bias Safe Operating Area
V
I
I
J
C
D
G
DS
on
= 175ºC
20
= 25ºC
= 150A
= 10mA
20
)
= 20V
Limit
40
Fig. 8. Transconductance
40
Fig. 10. Gate Charge
60
Q
G
60
I
- NanoCoulombs
D
V
80
- Amperes
DS
10
- Volts
80
100
IXTA300N04T2
IXTP300N04T2
IXYS REF: T_300N04T2(V6)08-14-08
120
100
T
J
= - 40ºC
DC
140
120
25ºC
25µs
100µs
1ms
10ms
100ms
150ºC
160
140
180
100