IXFH14N60P IXYS, IXFH14N60P Datasheet - Page 4

• Manufacturer Part Number: IXFH14N60P
• Description: MOSFET N-CH 600V 14A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFH14N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5.5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 13 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Fall Time: 26 ns
• Rise Time: 27 ns
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 14
• Rds(on), Max, Tj=25°c, (?): 0.55
• Ciss, Typ, (pf): 2500
• Qg, Typ, (nc): 36
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 300
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
50
45
40
35
30
25
20
15
10
100
50
45
40
35
30
25
20
15
10
5
0
10
5
0
1
5
0.3
0
5.5
f = 1 MHz
0.4
5
Fig. 9. Forward Voltage Drop of
0.5
6
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
6.5
0.6
T
Intrinsic Diode
J
= 125ºC
V
15
T
- 40ºC
V
V
J
GS
25ºC
SD
DS
= 125ºC
0.7
7
- Volts
- Volts
- Volts
20
7.5
0.8
25
0.9
C iss
C oss
C rss
8
T
J
30
= 25ºC
8.5
1
35
1.1
9
9.5
1.2
40
100
10
1
27
24
21
18
15
12
10
9
6
3
0
9
8
7
6
5
4
3
2
1
0
10
0
0
T
T
T
Fig. 12. Forward-Bias Safe Operating Area
J
J
C
V
I
I
= 150ºC
= - 40ºC
D
G
= 25ºC
DS
125ºC
5
= 11A
= 10mA
25ºC
5
= 300V
R
IXFA 14N60P IXFH 14N60P
DS(on)
10
Fig. 8. Transconductance
10
Limit
15
Q
Fig. 10. Gate Charge
G
I
- NanoCoulombs
V
15
D
20
DS
- Amperes
- Volts
100
20
25
DC
30
25
IXFP 14N60P
10ms
35
30
1ms
40
35
45
25µs
100µs
1000
40
50