STB12NK80ZT4 STMicroelectronics, STB12NK80ZT4 Datasheet - Page 5

MOSFET N-CH 800V 10.5A D2PAK

STB12NK80ZT4

Manufacturer Part Number
STB12NK80ZT4
Description
MOSFET N-CH 800V 10.5A D2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STB12NK80ZT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 5.25A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
10.5A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
87nC @ 10V
Input Capacitance (ciss) @ Vds
2620pF @ 25V
Power - Max
190W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.75 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10.5 A
Power Dissipation
190000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
5.25A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
650mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4320-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB12NK80ZT4
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB12NK80ZT4
Manufacturer:
ST
0
STB12NK80Z - STP12NK80Z - STW12NK80Z
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 7.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
BV
Symbol
Symbol
I
V
SDM
I
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
RRM
I
SD
GSO
Q
SD
t
rr
rr
(2)
(1)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-Source breakdown
voltage
Source drain diode
Gate-source zener diode
Parameter
Parameter
I
I
di/dt = 100A/µs,
V
Igs=±1mA
(Open drain)
SD
SD
DD
=10.5A, V
=10.5A,
Test conditions
Test conditions
=100V, Tj=150°C
GS
=0
Electrical characteristics
Min
Min
30
Typ.
Typ.
18.5
635
5.9
Max
10.5
Max
1.6
42
Unit
Unit
µC
ns
A
A
V
A
V
5/16

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