IRF3205PBF International Rectifier, IRF3205PBF Datasheet - Page 5

• Manufacturer Part Number: IRF3205PBF
• Description: MOSFET N-CH 55V 110A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3205PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 62A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 146nC @ 10V
• Input Capacitance (ciss) @ Vds: 3247pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 110 A
• Gate Charge, Total: 146 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 8 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 50 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 44 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 98 A
• Mounting Style: Through Hole
• Gate Charge Qg: 97.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3205PBF

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120
100
0.01
80
60
40
20
0.1
Fig 9. Maximum Drain Current Vs.
Fig 9. Maximum Drain Current Vs.
0.00001
0
1
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
Case Temperature
T , Case Temperature ( C)
C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
LIMITED BY PACKAGE
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
150
1
0.001
175
Fig 10b. Switching Time Waveforms
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
Fig 10a. Switching Time Test Circuit
V
V
90%
90%
10%
10%
V
V
DS
DS
GS
GS
0.01
R
R
Pulse Width
Pulse Width
Duty Factor
Duty Factor
G
G
10V
10V
V
V
GS
GS
1. Duty factor D = t / t
2. Peak T = P
t
t
d(on)
d(on)
Notes:
V
V
DS
DS
t
t
µs
µs
r
r
J
DM
D.U.T.
D.U.T.
x Z
1
0.1

thJC
IRF3205
P
2
DM
R
+ T
D
t
t
d(off)
d(off)
C
t
1
t
t
t
2
f
f
V
+
-
DD
1
5