IXTP18N60PM IXYS, IXTP18N60PM Datasheet - Page 3

• Manufacturer Part Number: IXTP18N60PM
• Description: MOSFET N-CH TO-220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTP18N60PM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 420 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 9.0
• Rds(on), Max, Tj=25°c, (?): 0.42
• Ciss, Typ, (pf): 2500
• Qg, Typ, (nc): 50
• Trr, Typ, (ns): 500
• Pd, (w): 90
• Rthjc, Max, (k/w): 1.39
• Package Style: Overmolded TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
18
16
14
12
10
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0
0
0
V
GS
2
5
Fig. 5. R
= 10V
1
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
10
4
2
DS(on)
15
6
Normalized to I
3
Drain Current
V
I
D
V
20
DS
8
DS
- Amperes
- Volts
V
- Volts
4
GS
V
= 10V
10
25
GS
8V
7V
= 10V
T
7V
J
6V
5V
5
D
= 125ºC
6V
5V
= 9A Value vs.
12
30
J
J
6
T
=125ºC
= 25ºC
14
J
35
= 25ºC
7
16
40
18
45
8
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
10
40
35
30
25
20
15
10
5
0
9
8
7
6
5
4
3
2
1
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
GS
-25
-25
Fig. 4. R
= 10V
5
Fig. 6. Maximum Drain Current vs.
0
0
DS(on)
10
Junction Temperature
T
Case Temperature
C
T
25
Normalized to I
25
J
- Degrees Centigrade
- Degrees Centigrade
V
V
GS
IXTP18N60PM
DS
50
= 10V
15
50
- Volts
8V
5V
7V
6V
75
I
75
D
D
= 18A
20
= 9A Value vs.
100
100
I
J
25
D
= 25ºC
= 9A
125
125
150
150
30