IRFS4321TRLPBF International Rectifier, IRFS4321TRLPBF Datasheet - Page 3

MOSFET N-CH 150V 83A D2PAK

IRFS4321TRLPBF

Manufacturer Part Number
IRFS4321TRLPBF
Description
MOSFET N-CH 150V 83A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFS4321TRLPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 33A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
83A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
4460pF @ 25V
Power - Max
330W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
85A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
12mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFS4321TRLPBFTR

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Part Number
Manufacturer
Quantity
Price
Part Number:
IRFS4321TRLPBF
Manufacturer:
Opto Diod
Quantity:
20
Part Number:
IRFS4321TRLPBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
1000
7000
6000
5000
4000
3000
2000
1000
1000
100
100
0.1
0.1
10
10
1
0
1
3.0
Fig 3. Typical Transfer Characteristics
0.1
1
Fig 1. Typical Output Characteristics
TOP
BOTTOM
T J = 175°C
Coss
Crss
Ciss
4.0
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
5.0V
5.0
1
V DS = 25V
T J = 25°C
60μs PULSE WIDTH
6.0
Tj = 25°C
f = 1 MHZ
10
60μs PULSE WIDTH
7.0
10
8.0
9.0
100
100
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
20
16
12
10
8
4
0
1
-60 -40 -20 0
0.1
0
Fig 2. Typical Output Characteristics
I D = 50A
TOP
BOTTOM
I D = 50A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
20
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
40
V DS = 120V
VDS= 75V
VDS= 30V
1
20 40 60 80 100 120 140 160 180
60
5.0V
Tj = 175°C
60μs PULSE WIDTH
80
10
100
120
100
3

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