IRF7749L2TRPBF International Rectifier, IRF7749L2TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7749L2TRPBF
• Description: MOSFET N-CH 60V DIRECTFET L8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7749L2TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 mOhm @ 120A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 375A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 12320pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L8
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 200 A
• Power Dissipation: 125 W
• Gate Charge Qg: 200 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

…
‡
Notes:
BV
ΔΒV
R
V
ΔV
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
C
C
I
I
V
t
Q
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
DS(on)
GS(th)
G
iss
oss
rss
oss
oss
SD
g
Q
Q
Q
Q
sw
oss
rr
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/ΔT
/ΔT
J
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) g
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
gs2
+ Q
gd
)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
280
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
60
12320
1810
8060
1310
0.03
–––
–––
–––
–––
–––
–––
200
100
850
–––
–––
–––
1.1
2.9
-10
1.1
71
83
67
17
43
78
39
45
78
36
12
1.50
-100
–––
–––
–––
250
100
–––
300
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
200
800
120
4.0
1.3
20
68
mV/°C
V/°C
mΩ
nA
nC
nC
nC
μA
pF
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
See Fig. 9
V
V
I
R
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/μs i
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
GS
GS
G
= 120A
= 120A
= 25°C, I
= 25°C, I
=1.8Ω
= V
= 60V, V
= 48V, V
= 10V, I
= 30V
= 16V, V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 30V, V
= 0V
= 0V, V
= 0V, V
GS
, I
D
Conditions
Conditions
S
F
D
DS
DS
D
D
= 250μA
GS
GS
GS
GS
= 120A, V
= 120A, V
= 250μA
= 120A i
= 120A
= 1.0V, f=1.0MHz
= 120V, f=1.0MHz
= 0V
= 0V, T
= 0V
= 10V i
D
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= 2mA
J
DD
GS
= 125°C
= 30V
= 0V i