IRF7759L2TRPBF International Rectifier, IRF7759L2TRPBF Datasheet - Page 10

• Manufacturer Part Number: IRF7759L2TRPBF
• Description: MOSFET N-CH 75V DIRECTFET L8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7759L2TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 96A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 375A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 12222pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L8
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 160 A
• Power Dissipation: 125 W
• Gate Charge Qg: 200 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DirectFET™ Tape & Reel Dimension (Showing component orientation).
10
NOTE: CONTROLLING
DIMENSIONS IN MM
LOADED TAPE FEED DIRECTION
NOTE: Controlling dimensions in mm Std reel
quantity is 4000 parts. (ordered as IRF7759L2PBF).
CODE
A
B
C
D
E
F
G
H
STANDARD OPTION (QTY 4000)
CODE
100.0
330.0
MIN
20.2
12.8
16.4
15.9
1.5
N.C
REEL DIMENSIONS
G
A
B
C
D
E
H
F
METRIC
MAX
N.C
N.C
13.2
N.C
N.C
22.4
18.4
18.4
11.90
15.90
3.90
7.40
7.20
9.90
1.50
1.50
MIN
METRIC
DIMENSIONS
12.992
0.795
0.504
0.059
3.937
0.646
0.626
MIN
N.C
12.10
16.30
10.10
7.60
7.40
1.60
MAX
4.10
IMPERIAL
NC
0.520
0.889
0.724
0.724
MAX
N.C
N.C
N.C
N.C
0.469
0.154
0.626
0.284
0.390
0.059
0.059
0.291
MIN
IMPERIAL
0.476
0.642
0.299
0.398
0.063
0.161
0.291
MAX
NC
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