IRF7779L2TRPBF International Rectifier, IRF7779L2TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7779L2TRPBF
• Description: MOSFET N-CH 150V DIRECTFET L8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7779L2TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 375A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 6660pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L8
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 67 A
• Power Dissipation: 125 W
• Gate Charge Qg: 97 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 10. Typical Source-Drain Diode Forward Voltage
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Fig 12. Maximum Drain Current vs. Case Temperature
1000
70
60
50
40
30
20
10
100
0
0.1
10
1
25
0.2
T J = 175°C
T J = 25°C
T J = -40°C
50
V SD , Source-to-Drain Voltage (V)
T C , CaseTemperature (°C)
0.4
75
100
0.6
Fig 14. Maximum Avalanche Energy Vs. Drain Current
125
1200
1000
800
600
400
200
V GS = 0V
0
0.8
25
150
Starting T J , Junction Temperature (°C)
50
1.0
175
75
100
TOP
BOTTOM
125
7.8A
12A
40A
150
1000
I D
100
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.1
10
1
Fig 13. Typical Threshold Voltage vs.
-75 -50 -25
0
Fig11. Maximum Safe Operating Area
175
Tc = 25°C
Tj = 175°C
Single Pulse
V DS , Drain-toSource Voltage (V)
Junction Temperature
1
T J , Temperature ( °C )
0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
DC
25
10msec
1msec
10
50
100μsec
75
100 125 150 175
100
I D = 1.0A
I D = 1.0mA
I D = 250μA
1000
5