IRF7739L2TRPBF International Rectifier, IRF7739L2TRPBF Datasheet

IRF7739L2TRPBF

Manufacturer Part Number

IRF7739L2TRPBF

Description

MOSFET N-CH 40V DIRECTFET L8

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7739L2TR1PBF.pdf (11 pages)

Specifications of IRF7739L2TRPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

1 mOhm @ 160A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

375A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

330nC @ 10V

Input Capacitance (ciss) @ Vds

11880pF @ 25V

Power - Max

3.8W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric L8

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

270 A

Power Dissipation

125 W

Gate Charge Qg

220 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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‚

Applicable DirectFET Outline and Substrate Outline

The IRF7739L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

the lowest on-state resistance in a package that has a footprint smaller than a D

compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection

soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package

allows dual sided cooling to maximize thermal transfer in power systems.

The IRF7739L2TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the

device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability

improvements, and makes this device ideal for high performance power converters.

Absolute Maximum Ratings

www.irf.com

Primary Switch Socket

RoHS Compliant, Halogen Free

Lead-Free (Qualified up to 260°C Reflow)

Ideal for High Performance Isolated Converter

Optimized for Synchronous Rectification

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Techniques

Industrial Qualified

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

@ T

= 25°C

= 100°C

= 25°C

5.0

Fig 1. Typical On-Resistance vs. Gate Voltage

5.5

V GS, Gate -to -Source Voltage (V)

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

6.0

T J = 25°C

6.5

7.0

T J = 125°C

Parameter

I D = 160A

7.5

@ 10V

8.0

(Silicon Limited)

(Package Limited)

„

…

†

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

measured with thermocouple mounted to top (Drain) of part.

0.93

0.92

0.91

0.90

0.89

0.88

0.87

0.86

0.85

PAK and only 0.7 mm profile. The DirectFET package is

= 25°C, L = 0.021mH, R

V GS = 10V

Fig 2. Typical On-Resistance vs. Drain Current

40V min

DirectFET™ Power MOSFET ‚

220nC

g tot

DSS

IRF7739L2TR1PbF

I D , Drain Current (A)

IRF7739L2TRPbF

Max.

1070

270

190

375

270

160

±20

±20V max 0.70mΩ@ 10V

81nC

= 25Ω, I

120

DirectFET™ ISOMETRIC

packaging to achieve

= 160A.

160

2.8V

DS(on)

gs(th)

Units

01/26/11

200

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IRF7739L2TRPBF Summary of contents

Page 1

... The IRF7739L2TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 100°C Power Dissipation D C Power Dissipation 25° Peak Soldering Temperature P Operating Junction and Storage Temperature ...

Page 4

PULSE WIDTH 25°C 4.5V 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 100 175° 25V ≤60µs ...

Page 5

175°C 100 25°C 10 1.0 0.0 0.5 1.0 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 300 250 200 150 100 100 ...

Page 6

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τj = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs. Pulsewidth 300 TOP Single ...

Page 7

DUT 0 1K 20K S Fig 18a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 20a. Switching Time ...

Page 8

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations GATE D = DRAIN S = SOURCE www.irf.com ...

Page 9

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations DirectFET™ Part Marking Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com DIMENSIONS IMPERIAL METRIC CODE MAX MIN MIN MAX 9.15 ...

Page 10

DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: CONTROLLING DIMENSIONS IN MM Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. (ordered as ...

Page 11

... Part number Package Type IRF7739L2TRPbF DirectFET2 Large Can IRF7739L2TR1PbF DirectFET2 Large Can † Qualification Information Qualification level Moisture Sensitivity Level RoHS Compliant † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. ...

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