IXTH102N15T IXYS, IXTH102N15T Datasheet - Page 7
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IXTH102N15T
Manufacturer Part Number
IXTH102N15T
Description
MOSFET N-CH 150V 102A TO-247
Manufacturer
IXYS
Datasheet
1.IXTH102N15T.pdf
(7 pages)
Specifications of IXTH102N15T
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
102A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
87nC @ 10V
Input Capacitance (ciss) @ Vds
5220pF @ 25V
Power - Max
455W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
102 A
Power Dissipation
455 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
102
Rds(on), Max, Tj=25°c, (?)
0.018
Ciss, Typ, (pf)
5220
Qg, Typ, (nc)
87
Trr, Typ, (ns)
97
Trr, Max, (ns)
-
Pd, (w)
455
Rthjc, Max, (k/w)
0.33
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2009 IXYS CORPORATION, All Rights Reserved
1.00
0.10
0.01
0.0001
0.001
Fig. 19. Maximum Transient Thermal Impedance
0.01
Pulse Width - Seconds
0.1
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
1
IXYS REF: F_102N15T(6E)90-30-08
10