STW13NK60Z STMicroelectronics, STW13NK60Z Datasheet - Page 6

• Manufacturer Part Number: STW13NK60Z
• Description: MOSFET N-CH 600V 13A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW13NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 2030pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohms
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 13 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3257-5

Electrical characteristics
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Table 6.
Table 7.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
Symbol
Symbol
BV
I
V
t
SDM
t
t
r(Voff)
I
d(on)
d(off)
SD
RRM
I
Q
t
SD
t
t
t
t
GSO
c
rr
r
f
f
rr
(1)
(2)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Gate-source breakdown
voltage
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Gate-source Zener diode
Source drain diode
Parameter
Parameter
Parameter
Doc ID 8527 Rev 7
V
R
(see Figure 20)
V
R
(see Figure 20)
V
R
(see Figure 20)
Igs=±1mA
(open drain)
I
I
di/dt = 100 A/µs,
V
SD
SD
DD
DD
DD
G
G
G
DD
=4.7 Ω, V
=4.7 Ω, V
=4.7 Ω, V
Test conditions
= 10 A,
Test conditions
= 300 V, I
=300 V, I
=480 V, I
Test conditions
= 10 A, V
=35 V, Tj=150 °C
STB13NK60ZT4, STx13NK60Z, STP13NK60ZFP
D
D
GS
GS
GS
D
GS
= 5 A,
= 10 A,
= 5 A,
=10 V
=10 V
=10 V
=0
Min.
30
Min.
Min.
-
-
-
-
-
-
Typ.
Typ.
22
14
61
12
10
20
9
Typ.
-
570
4.5
16
Max.
Max.
-
-
-
Max.
-
1.6
10
40
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
V
Unit
µC
ns
A
A
V
A