IRF7799L2TRPBF International Rectifier, IRF7799L2TRPBF Datasheet - Page 3
![MOSFET N-CH 250V DIRECTFET L8](/photos/28/10/281082/irf7739l2tr1pbf_sml.jpg)
IRF7799L2TRPBF
Manufacturer Part Number
IRF7799L2TRPBF
Description
MOSFET N-CH 250V DIRECTFET L8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7799L2TRPBF.pdf
(11 pages)
Specifications of IRF7799L2TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
38 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
375A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
165nC @ 10V
Input Capacitance (ciss) @ Vds
6714pF @ 25V
Power - Max
4.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric L8
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
35 A
Power Dissipation
125 W
Gate Charge Qg
110 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7799L2TRPBF
Manufacturer:
UCHIHASHI
Quantity:
10 000
Surface mounted on 1 in. square Cu
board (still air).
Absolute Maximum Ratings
P
P
P
T
T
T
Thermal Resistance
R
R
R
R
R
Notes:
www.irf.com
P
J
STG
D
D
D
θJA
θJA
θJA
θJ-can
θJ-PCB
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling, mounting pad with large heatsink.
T
@T
@T
@T
C
measured with thermocouple incontact with top (Drain) of part.
C
C
A
0.001
= 25°C
= 100°C
= 25°C
0.01
0.1
10
1
1E-006
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
D = 0.50
0.20
0.10
0.05
0.02
0.01
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
l
c
e
j
k
Parameter
Parameter
0.0001
t 1 , Rectangular Pulse Duration (sec)
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
0.001
back and with small clip heatsink.
τ
Mounted on minimum footprint full size board with metalized
R
J
τ
θ
J
τ
1
Ci= τi/Ri
is measured at
τ
1
Ci
i/Ri
R
1
R
1
τ
0.01
2
τ
R
2
2
R
T
2
J
of approximately 90°C.
τ
Typ.
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
12.5
C
–––
–––
–––
τ
20
Ri (°C/W)
0.38829
0.8117
-55 to + 175
Max.
125
270
4.3
63
0.1
τi (sec)
0.006586
0.000787
Max.
–––
–––
1.2
0.5
35
1
Units
Units
°C/W
°C
W
3