IRF7779L2TR1PBF International Rectifier, IRF7779L2TR1PBF Datasheet - Page 7
![MOSFET N-CH 150V 375A DIRECTFET](/photos/28/10/281082/irf7739l2tr1pbf_sml.jpg)
IRF7779L2TR1PBF
Manufacturer Part Number
IRF7779L2TR1PBF
Description
MOSFET N-CH 150V 375A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7779L2TRPBF.pdf
(11 pages)
Specifications of IRF7779L2TR1PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
375A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
6660pF @ 25V
Power - Max
3.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric L8
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
67 A
Power Dissipation
125 W
Gate Charge Qg
97 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7779L2TR1PBFTR
Fig 19a. Unclamped Inductive Test Circuit
www.irf.com
Fig 18a. Gate Charge Test Circuit
0
R G
20V
GS
V DS
Fig 20a. Switching Time Test Circuit
t p
20K
1K
≤ 0.1 %
I AS
≤ 1
D.U.T
0.01 Ω
L
S
DUT
15V
L
DRIVER
+
-
V DD
+
-
VCC
A
V
90%
10%
V
Fig 18b. Gate Charge Waveform
DS
GS
Id
Fig 19b. Unclamped Inductive Waveforms
I
Vgs
AS
Fig 20b. Switching Time Waveforms
t
d(on)
Qgodr
t
r
t p
Qgd
Qgs2
V
t
d(off)
Vgs(th)
(BR)DSS
Vds
Qgs1
t
f
7