IRFB4227PBF International Rectifier, IRFB4227PBF Datasheet
IRFB4227PBF
Manufacturer Part Number
IRFB4227PBF
Description
MOSFET N-CH 200V 65A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRFB4227PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24 mOhm @ 46A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
65A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
98nC @ 10V
Input Capacitance (ciss) @ Vds
4600pF @ 25V
Power - Max
330W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
65 A
Gate Charge, Total
70 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
330 W
Resistance, Drain To Source On
19.7 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-40 °C
Time, Turn-off Delay
21 ns
Time, Turn-on Delay
33 ns
Transconductance, Forward
49 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±30 V
Transistor Polarity
N Channel
Continuous Drain Current Id
65A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
19.7mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
30V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
65 A
Mounting Style
Through Hole
Gate Charge Qg
70 nC
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.024Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±30V
Operating Temp Range
-40C to 175C
Operating Temperature Classification
Automotive
Mounting
Through Hole
Pin Count
3 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFB4227PBF
Manufacturer:
ATHEROS
Quantity:
560
Part Number:
IRFB4227PBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Description
Notes through † are on page 8
Features
l
l
l
l
l
l
l
l
l
Absolute Maximum Ratings
V
I
I
I
I
P
P
T
T
Thermal Resistance
R
R
R
175°C Operating Junction Temperature for
and Reliability
D
D
DM
RP
Energy Recovery and Pass Switch Applications
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
Reliable Operation
Improved Ruggedness
(Half-bridge)
Advanced Process Technology
Key Parameters Optimized for PDP Sustain,
Low E
Low Q
High Repetitive Peak Current Capability for
Short Fall & Rise Times for Fast Switching
Repetitive Avalanche Capability for Robustness
Class-D Audio Amplifier 300W-500W
GS
D
D
J
STG
θJC
θCS
θJA
@ T
@ T
@T
@T
@ T
HEXFET
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
PULSE
G
= 100°C
for Fast Response
MOSFET
®
Rating to Reduce Power
Power MOSFET
Gate-to-Source Voltage
Pulsed Drain Current
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Continuous Drain Current, V
Continuous Drain Current, V
f
Parameter
Parameter
f
g
MOSFET
GS
GS
PULSE
@ 10V
@ 10V
V
V
R
I
T
RP
J
DS
DS (Avalanche)
DS(ON)
G
max
max @ T
max
Gate
G
typ. @ 10V
typ.
C
Typ.
0.50
–––
–––
= 100°C
Key Parameters
D
S
10lb
-40 to + 175
IRFB4227PbF
x
in (1.1N
Max.
260
130
330
190
300
±30
2.2
65
46
Drain
D
x
m)
MOSFET
Max.
0.45
–––
62
19.7
200
240
130
175
D
TO-220AB
Source
S
Units
Units
W/°C
°C/W
°C
W
N
V
A
m
°C
G
V
V
A
D
S
1
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IRFB4227PBF Summary of contents
Page 1
... Notes through † are on page 8 V max (Avalanche) R typ. @ 10V DS(ON) I max @ max Gate MOSFET PULSE Parameter @ 10V GS @ 10V GS g Parameter f f IRFB4227PbF Key Parameters 200 typ. 240 19.7 = 100°C 130 C 175 TO-220AB D S Drain Source MOSFET Max. Units ± 260 130 330 190 2.2 W/° ...
Page 2
... IRFB4227PbF Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage ...
Page 3
... IRFB4227PbF TO-220AB packages are not recommended for Surface Mount Application. Notes: Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 0.18mH 25Ω ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ approximately 90° measured at θ J … ...