IXTH260N055T2 IXYS, IXTH260N055T2 Datasheet - Page 4

• Manufacturer Part Number: IXTH260N055T2
• Description: MOSFET N-CH 55V 260A TO-247
• Manufacturer: IXYS
• Series: TrenchT2™r

Specifications of IXTH260N055T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 260A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 10800pF @ 25V
• Power - Max: 480W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 260
• Rds(on), Max, Tj=25°c, (?): 0.0033
• Ciss, Typ, (pf): 10800
• Qg, Typ, (nc): 140
• Trr, Typ, (ns): 60
• Pd, (w): 480
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
100
200
180
160
140
120
100
360
320
280
240
200
160
120
80
60
40
20
80
40
0
0
3.0
0.3
0
0.4
f
= 1 MHz
5
3.5
0.5
Fig. 9. Forward Voltage Drop of
10
Fig. 7. Input Admittance
0.6
4.0
T
Fig. 11. Capacitance
J
= 150ºC
Intrinsic Diode
0.7
15
T
V
J
GS
4.5
V
V
= 150ºC
0.8
SD
DS
- 40ºC
- Volts
25ºC
- Volts
20
- Volts
0.9
5.0
T
25
J
1.0
= 25ºC
C oss
C rss
C iss
5.5
1.1
30
1.2
6.0
35
1.3
6.5
1.4
40
1,000
100
140
120
100
10
80
60
40
20
10
1
0
9
8
7
6
5
4
3
2
1
0
1
0
0
External Lead Current Limit
R
T
T
Single Pulse
Fig. 12. Forward-Bias Safe Operating Area
10
V
I
I
DS(
20
J
C
D
G
DS
= 175ºC
= 25ºC
= 130A
= 10mA
on
20
= 28V
)
Limit
40
30
Fig. 8. Transconductance
60
40
Fig. 10. Gate Charge
Q
50
T
80
J
G
= - 40ºC
IXTH260N055T2
I
- NanoCoulombs
D
V
60
100
- Amperes
DS
10
70
- Volts
120
80
25ºC
140
90 100 110 120 130 140
160
IXYS REF: T_260N055T2(V6)12-15-08-B
150ºC
180
DC
200
25µs
100µs
1ms
10ms
100ms
220
100