STP16NK60Z STMicroelectronics, STP16NK60Z Datasheet

MOSFET N-CH 600V 14A TO-220

STP16NK60Z

Manufacturer Part Number
STP16NK60Z
Description
MOSFET N-CH 600V 14A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheets

Specifications of STP16NK60Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
420 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
86nC @ 10V
Input Capacitance (ciss) @ Vds
2650pF @ 25V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.42 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
14 A
Power Dissipation
190000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
14A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
420mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4372-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP16NK60Z
Manufacturer:
ST
Quantity:
10 000
Part Number:
STP16NK60Z
Manufacturer:
STMicroelectronics
Quantity:
1 975
Part Number:
STP16NK60Z
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP16NK60Z
Manufacturer:
ST
Quantity:
20 000
Part Number:
STP16NK60Z-S
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP16NK60Z-S
Manufacturer:
ST
0
Part Number:
STP16NK60ZFP
Manufacturer:
ST
0
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
ORDER CODE
March 2004
STP16NK60Z
STB16NK60Z-S
STW16NK60Z
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES
PART NUMBER
STB16NK60Z-S
STW16NK60Z
N-CHANNEL 600V - 0.38 - 14A TO-220 / I
TYPE
STP16NK60Z
DS
(on) = 0.38
600 V
600 V
600 V
V
DSS
< 0.42
< 0.42
< 0.42
R
DS(on)
W16NK60Z
P16NK60Z
B16NK60Z
MARKING
Zener-Protected SuperMESH™ MOSFET
14 A
14 A
14 A
I
D
STP16NK60Z - STB16NK60Z-S
190 W
190 W
190 W
Pw
PACKAGE
INTERNAL SCHEMATIC DIAGRAM
TO-220
TO-220
TO-247
I
2
SPAK
1
2
3
STW16NK60Z
TO-247
2
SPAK / TO-247
1
PACKAGING
2
3
TUBE
TUBE
TUBE
I
2
SPAK
1 2
3
1/11

Related parts for STP16NK60Z

STP16NK60Z Summary of contents

Page 1

... ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES ORDER CODE PART NUMBER STP16NK60Z STB16NK60Z-S STW16NK60Z March 2004 STP16NK60Z - STB16NK60Z-S Zener-Protected SuperMESH™ MOSFET 190 190 190 W TO-220 ...

Page 2

... STP16NK60Z - STB16NK60Z-S - STW16NK60Z ABSOLUTE MAXIMUM RATINGS Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT Derating Factor V Gate source ESD (HBM-C= 100pF, R= 1.5K ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope ...

Page 3

... Reverse Recovery Current I RRM Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by safe operating area defined as a constant equivalent capacitance giving the same charging time as C oss eq DSS STP16NK60Z - STB16NK60Z-S - STW16NK60Z =25°C UNLESS OTHERWISE SPECIFIED) CASE Test Conditions mA Max Rating ...

Page 4

... STP16NK60Z - STB16NK60Z-S - STW16NK60Z Safe Operating Area for TO-220/I²SPAK Safe Operating Area for TO-247 Output Characteristics 4/11 Thermal Impedance for TO-220/I²SPAK Thermal Impedance for TO-247 Transfer Characteristics ...

Page 5

... Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Thereshold Voltage vs Temp. STP16NK60Z - STB16NK60Z-S - STW16NK60Z Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature 5/11 ...

Page 6

... STP16NK60Z - STB16NK60Z-S - STW16NK60Z Source-drain Diode Forward Characteristics Maximum Avalanche Energy vs Temperature 6/11 Normalized BVDSS vs Temperature ...

Page 7

... Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP16NK60Z - STB16NK60Z-S - STW16NK60Z Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit 7/11 ...

Page 8

... STP16NK60Z - STB16NK60Z-S - STW16NK60Z DIM. MIN. A 4.40 b 0.61 b1 1.15 c 0.49 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 øP 3.75 Q 2.65 8/11 TO-220 MECHANICAL DATA mm. TYP MAX. MIN. 4.60 0.173 0.88 0.024 1.70 0.045 0.70 0.019 15.75 0.60 10.40 0.393 2.70 ...

Page 9

... TYP A 4.40 A1 2.49 B 0.70 B2 1.14 C 0.45 C2 1.23 D 8.95 E 10.00 G 4.88 L 16.7 L2 1.27 L3 13.82 STP16NK60Z - STB16NK60Z-S - STW16NK60Z inch MAX. MIN. TYP. 4.60 0.173 2.69 0.098 0.93 0.027 1.70 0.045 0.60 0.018 1.36 0.048 9.35 0.352 10.40 0.394 5.28 0.192 17.5 0.657 1.4 ...

Page 10

... STP16NK60Z - STB16NK60Z-S - STW16NK60Z DIM. MIN. A 4.85 A1 2.20 b 1.0 b1 2.0 b2 3.0 c 0.40 D 19.85 E 15. 14.20 L1 3.70 L2 øP 3.55 øR 4.50 S 10/11 TO-247 MECHANICAL DATA mm. TYP MAX. MIN. 5.15 0.19 2.60 0.086 1.40 0.039 2.40 0.079 3.40 0.118 0.80 0.015 20.15 0.781 15.75 ...

Page 11

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