IXTQ52N30P IXYS, IXTQ52N30P Datasheet - Page 4

• Manufacturer Part Number: IXTQ52N30P
• Description: MOSFET N-CH 300V 52A TO-3P
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXTQ52N30P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 66 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 52A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 3490pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.066 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 52 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 52
• Rds(on), Max, Tj=25°c, (?): 0.066
• Ciss, Typ, (pf): 3490
• Qg, Typ, (nc): 110
• Trr, Typ, (ns): 250
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
100
90
80
70
60
50
40
30
20
10
150
125
100
0
75
50
25
0
4
0
0.4
4.5
T
5
J
f = 1MHz
= 125ºC
T
J
Fig. 11. Capacitance
Fig. 9. Source Current vs.
0.6
Fig. 7. Input Adm ittance
-40ºC
Source-To-Drain Voltage
= 125ºC
25ºC
10
5
5.5
V
15
V
V
0.8
G S
S D
D S
- Volts
- Volts
20
- Volts
6
T
J
= 25ºC
6.5
1
25
C oss
C rss
C iss
30
7
1.2
7.5
35
1.4
40
8
1000
100
10
60
50
40
30
20
10
10
1
0
9
8
7
6
5
4
3
2
1
0
10
0
0
R
T
DS
J
10
V
I
I
= -40ºC
(on)
D
G
125ºC
DS
Fig. 12. Forw ard-Bias Safe
Fig. 8. Transconductance
DC
= 26A
= 10mA
25ºC
20
Limit
= 150V
20
Fig. 10. Gate Charge
Operating Area
30
Q
40
10ms
G
I
- nanoCoulombs
V
40
D
- Amperes
D S
1ms
100
50
60
- Volts
IXTQ 52N30P
60
IXTT 52N30P
25µs
80
70
T
C
= 25ºC
80
100
90
1000
100
120