IXTH120P065T IXYS, IXTH120P065T Datasheet - Page 4

• Manufacturer Part Number: IXTH120P065T
• Description: MOSFET P-CH 65V 120A TO-247
• Manufacturer: IXYS
• Series: TrenchP™r

Specifications of IXTH120P065T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 65V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 185nC @ 10V
• Input Capacitance (ciss) @ Vds: 13200pF @ 25V
• Power - Max: 298W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): -65
• Id(cont), Tc=25°c, (a): -120
• Rds(on), Max, Tj=25°c, (?): 0.01
• Ciss, Typ, (pf): 13200
• Qg, Typ, (nc): 185
• Trr, Typ, (ns): 53
• Trr, Max, (ns): -
• Pd, (w): 298
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
-180
-160
-140
-120
-100
-300
-250
-200
-150
-100
100
-50
-80
-60
-40
-20
0
0
-0.4
-3.0
0
f
-0.5
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-5
-3.5
-0.6
-10
-0.7
-4.0
T
J
Fig. 7. Input Admittance
= 125ºC
Fig. 11. Capacitance
T
-0.8
J
-15
= 125ºC
- 40ºC
V
25ºC
-4.5
DS
V
V
-0.9
GS
SD
- Volts
- Volts
- Volts
-20
-1.0
T
-5.0
J
= 25ºC
C rss
C iss
C oss
-25
-1.1
-5.5
-1.2
-30
-1.3
-6.0
-35
-1.4
-1.5
-6.5
-40
-
1,000
-
110
100
100
-
-10
90
80
70
60
50
40
30
20
10
10
-
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
1
-
0
0
1
R
External Lead
Current Limit
DS(on)
T
T
Single Pulse
V
I
I
D
G
J
C
DS
20
-20
= 150ºC
= - 60A
= -1mA
= 25ºC
= - 33V
Limit
IXTA120P065T IXTH120P065T
Fig. 12. Forward-Bias Safe Operating Area
40
-40
10ms
Fig. 8. Transconductance
60
-60
Fig. 10. Gate Charge
1ms
Q
I
80
D
G
- Amperes
- NanoCoulombs
V
-80
DS
-
100
10
- Volts
DC, 100ms
-100
T
J
IXTP120P065T
120
= - 40ºC
100µs
125ºC
25ºC
-120
140
-140
25µs
160
-160
180
-
-180
200
100