IRF8010SPBF International Rectifier, IRF8010SPBF Datasheet - Page 4

• Manufacturer Part Number: IRF8010SPBF
• Description: MOSFET N-CH 100V 80A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF8010SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 45A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 3830pF @ 25V
• Power - Max: 260W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 80 A
• Gate Charge, Total: 81 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 260 W
• Resistance, Drain To Source On: 12 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 61 ns
• Time, Turn-on Delay: 15 ns
• Transconductance, Forward: 82 V
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 120 ns
• Gate Charge Qg: 81 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 130 ns
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.015Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF8010SPBF

IRF8010S/LPbF
Notes:

‚
ƒ
„
…
10
Dimensions are shown in millimeters (inches)
Repetitive rating; pulse width limited by max. junction
Pulse width ≤ 300µs; duty cycle ≤ 2%.
temperature.
I
Rth(jc) (end of life) is the maximum measured value
after 1000 temperature cycles from -55 to 150°C and
is accounted for by the physical wearout of the die attach
medium
material (solder/substrate), process and re-flow
temperature.
2
Starting T
SD
≤ 45A, di/dt ≤ 110A/µs, V
in worse case PCB mounting condition of
J
= 25°C, L = 0.31mH, R
FEED DIRECTION
FEED DIRECTION
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
TRR
TRL
DD
330.00
(14.173)
MAX.
≤ V
1.85 (.073)
1.65 (.065)
G
(BR)DSS
= 25Ω, I
This product has been designed and qualified for the Industrial market.
10.90 (.429)
10.70 (.421)
13.50 (.532)
12.80 (.504)
, T
4.10 (.161)
3.90 (.153)
J
AS
≤ 175°C.
= 45A.
1.60 (.063)
1.50 (.059)
Data and specifications subject to change without notice.
Qualification Standards can be found on IR’s Web site.
†
‡
ˆ
16.10 (.634)
15.90 (.626)
C
Calculated continuous current based on maximum
V
allowable junction temperature. Package limitation
When mounted on 1" square PCB ( FR-4 or G-10
charging time as C
current is 75A.
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
11.60 (.457)
11.40 (.449)
oss
DSS
1.75 (.069)
1.25 (.049)
eff. is a fixed capacitance that gives the same
1.60 (.063)
1.50 (.059)
.
27.40 (1.079)
23.90 (.941)
26.40 (1.039)
24.40 (.961)
15.42 (.609)
15.22 (.601)
4
3
oss
while V
30.40 (1.197)
0.368 (.0145)
0.342 (.0135)
60.00 (2.362)
MAX.
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
4
MIN.
DS
is rising from 0 to 80%