IRF8010SPBF International Rectifier, IRF8010SPBF Datasheet - Page 3

• Manufacturer Part Number: IRF8010SPBF
• Description: MOSFET N-CH 100V 80A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF8010SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 45A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 3830pF @ 25V
• Power - Max: 260W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 80 A
• Gate Charge, Total: 81 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 260 W
• Resistance, Drain To Source On: 12 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 61 ns
• Time, Turn-on Delay: 15 ns
• Transconductance, Forward: 82 V
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 120 ns
• Gate Charge Qg: 81 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 130 ns
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.015Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF8010SPBF

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10000
1000
1000
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
100
100
0.1
10
10
1
1
2.0
0.1
TOP
BOTTOM
4.0
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J = 25°C
VGS
15V
12V
10V
6.0V
5.5V
5.0V
4.5V
4.0V
6.0
1
8.0
20µs PULSE WIDTH
Tj = 25°C
V DS = 50V
20µs PULSE WIDTH
10.0
4.0V
10
T J = 175°C
12.0
14.0
100
16.0
1000
100
10
Fig 2. Typical Output Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
-60
0.1
Fig 4. Normalized On-Resistance
I
D
TOP
BOTTOM
-40
=
80A
-20
V DS , Drain-to-Source Voltage (V)
T , Junction Temperature
J
Vs. Temperature
0
VGS
15V
12V
10V
6.0V
5.5V
5.0V
4.5V
4.0V
IRF8010S/LPbF
20
1
40
60
20µs PULSE WIDTH
Tj = 175°C
80
100 120 140 160 180
4.0V
10
( C)
V
°
GS
=
10V
3
100