STP60NF10 STMicroelectronics, STP60NF10 Datasheet - Page 4

• Manufacturer Part Number: STP60NF10
• Description: MOSFET N-CH 100V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r
• Type: Power MOSFETr

Specifications of STP60NF10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 23 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 104nC @ 10V
• Input Capacitance (ciss) @ Vds: 4270pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.023 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 78 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.023Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4384-5

Electrical characteristics
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Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
C
I
I
DS(on)
C
C
GS(th)
Q
Q
DSS
GSS
fs
Q
oss
rss
iss
gs
gd
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
I
V
V
V
V
V
V
V
V
V
V
D
DS
DS
GS
DS
GS
GS
GS
DS
DS
DD
= 250µA, V
= V
= 10V, I
= Max rating,
= Max rating @125°C
= ±20V
= 25V, I
=25V, f = 1 MHz,
= 0
=10V
= 50V, I
Test conditions
Test conditions
GS
, I
STB60NF10 - STB60NF10 -1 - STP60NF10
D
D
D
D
= 40A
GS
= 250µA
= 40A
= 80A
= 0
Min.
100
Min.
2
0.019
Typ.
4270
Typ.
470
140
104
78
20
32
3
0.023
Max.
Max.
±100
10
1
4
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
S
V
V
Ω