STB21N65M5 STMicroelectronics, STB21N65M5 Datasheet - Page 17
![MOSFET N-CH 650V 17A D2PAK](/photos/29/5/290510/d2pak_sml.jpg)
STB21N65M5
Manufacturer Part Number
STB21N65M5
Description
MOSFET N-CH 650V 17A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB21N65M5.pdf
(18 pages)
Specifications of STB21N65M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1950pF @ 100V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohm
Drain-source Breakdown Voltage
650 V
Continuous Drain Current
10.7 A, 17 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
50 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10562-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB21N65M5
Manufacturer:
STM
Quantity:
3 139
STB/F/I/P/W21N65M5
6
Revision history
Table 9.
11-Nov-2009
24-Feb-2009
27-Feb-2009
Date
Document revision history
Revision
1
2
3
First release
Corrected package information on first page.
Document status promoted from preliminary data to datasheet.
Doc ID 15427 Rev 3
Changes
Revision history
17/18