STB21N65M5 STMicroelectronics, STB21N65M5 Datasheet - Page 17

• Manufacturer Part Number: STB21N65M5
• Description: MOSFET N-CH 650V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB21N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1950pF @ 100V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohm
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 10.7 A, 17 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 50 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10562-2

STB/F/I/P/W21N65M5
6
Revision history
Table 9.
11-Nov-2009
24-Feb-2009
27-Feb-2009
Date
Document revision history
Revision
1
2
3
First release
Corrected package information on first page.
Document status promoted from preliminary data to datasheet.
Doc ID 15427 Rev 3
Changes
Revision history
17/18