IRFP260MPBF International Rectifier, IRFP260MPBF Datasheet - Page 2

• Manufacturer Part Number: IRFP260MPBF
• Description: MOSFET N-CH 200V 49A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP260MPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 234nC @ 10V
• Input Capacitance (ciss) @ Vds: 4057pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 40mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 300 W
• Mounting Style: Through Hole
• Gate Charge Qg: 156 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFP260MPbF
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T

‚
Notes:
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
L
L
I
I
V
t
Q
t
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
fs
D
S
(BR)DSS
GS(th)
SD
2
DS(on)
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature.
R
Starting T
G
= 25Ω, I
/∆T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
= 25°C, L = 1.5mH
AS
= 28A.

Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
„
Pulse width ≤ 400µs; duty cycle ≤ 2%.
T
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
27
–––
–––
–––
–––
–––
–––
J
≤ 175°C
Intrinsic turn-on time is negligible (turn-on is dominated by L
≤ 28A di/d ≤ 486A/µs, V
4057 –––
0.26 –––
–––
––– 0.04
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
603
161
–––
–––
–––
268
1.9
5.0
13
17
60
55
48
–––
–––
–––
250
100
234
110
–––
–––
–––
–––
–––
–––
–––
200
402
4.0
1.3
2.8
25
38
50
V/°C
µA
nA
nC
ns
µC
pF
ns
nH
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
DD
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
J
J
G
= 28A
= 28A
= 25°C, I
= 25°C, I
= 1.8Ω
≤ V
= 0V, I
= 10V, I
= V
= 50V, I
= 200V, V
= 160V, V
= 20V
= -20V
= 160V
= 10V
= 100V
= 10V
= 0V
= 25V
(BR)DSS
GS
, I
D
„
S
F
D
D
D
Conditions
„
= 250µA
Conditions
= 28A
= 28A, V
,
= 28A
= 250µA
= 28A „
GS
GS
„
= 0V
= 0V, T
D
GS
= 1mA
„
www.irf.com
J
= 0V
G
= 150°C
G
S
„
+L
D
S
D
)
S
D