IXFH110N10P IXYS, IXFH110N10P Datasheet - Page 2

• Manufacturer Part Number: IXFH110N10P
• Description: MOSFET N-CH 100V 110A TO-247
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXFH110N10P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 3550pF @ 25V
• Power - Max: 480W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.015 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 480 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 110
• Rds(on), Max, Tj=25°c, (?): 0.015
• Ciss, Typ, (pf): 3550
• Qg, Typ, (nc): 110
• Trr, Typ, (ns): -
• Trr, Max, (ns): 150
• Pd, (w): 480
• Rthjc, Max, (ºc/w): 0.31
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
S
SM
d(on)
r
d(off)
f
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
fs
PLUS220SMD (IXFV_S) Outline
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
one or moreof the following U.S. patents:
Test Conditions
V
V
V
R
V
(TO-247)
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 25 A, -di/dt = 100 A/µs
= 50 V, V
= 10 V; I
= 4 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
= 0 V,
D
DS
DS
GS
= 0.5 I
DS
= 25 V, f = 1 MHz
= 0.5 V
= 0 V
= 0.5 V
4,850,072
4,881,106
D25
, pulse test
DSS
DSS
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 0.5 I
= 60 A
(T
(T
J
J
= 25° C, unless otherwise specified)
= 25° C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
30
Characteristic Values
Characteristic Values
3550
1370
Typ.
Typ.
0.21
440
110
0.6
40
21
25
65
25
25
62
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
0.31° C/W
110
250
150 ns
1.5
° C/W
IXFH 110N10P IXFV110N10P
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
S
A
A
V
PLUS220 (IXFV) Outline
TO-247 (IXFH) Outline
6,683,344
6,710,405B2
6,710,463
Dim.
Terminals: 1 - Gate 2 - Drain
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
Min.
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
4.7
2.2
2.2
1.0
Millimeter
1
IXFV 110N10PS
.4
6,727,585
6,759,692
6771478 B2
3 - Source TAB - Drain
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216