IXFH52N30P IXYS, IXFH52N30P Datasheet - Page 2

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IXFH52N30P

Manufacturer Part Number
IXFH52N30P
Description
MOSFET N-CH 300V 52A TO-247
Manufacturer
IXYS
Series
PolarHT™r
Datasheet

Specifications of IXFH52N30P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
66 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
52A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
3490pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.066 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
52 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
52
Rds(on), Max, Tj=25°c, (?)
0.066
Ciss, Typ, (pf)
3490
Qg, Typ, (nc)
110
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
400
Rthjc, Max, (ºc/w)
0.31
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH52N30P
Manufacturer:
IXYS
Quantity:
10 000
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
T
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
d(on)
d(off)
f
S
SM
RM
r
rr
fs
J
PLUS220SMD (IXFV_S) Outline
SD
iss
oss
rss
g(on)
gs
gd
thJC
thCS
RM
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
Resistive Switching Times
V
R
I
V
Test Conditions
V
V
V
(TO-247, PLUS220)
V
Repetitive, pulse width limited by T
I
F
F
GS
GS
GS
GS
R
DS
G
= I
= 25A, -di/dt = 100A/μs
= 100V, V
= 10V, V
= 4Ω (External)
= 0V
= 10V, I
= 10V, V
S
= 0V, V
, V
GS
= 0V, Note 1
D
DS
DS
GS
DS
= 0.5 • I
= 0.5 • V
= 25V, f = 1MHz
= 0V
4,835,592
4,881,106
= 0.5 • V
D25
DSS
, Note 1
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 52A
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
20
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
3490
Typ.
0.25
550
130
110
160
800
60
30
24
20
25
53
22
7
0.31 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
150
200 ns
1.5
52
°C/W
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
IXFH52N30P IXFV52N30P
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247 (IXFH) Outline
PLUS220 (IXFV) Outline
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
6,727,585
1
2
6,771,478 B2 7,071,537
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15
Min.
4.7
2.2
2.2
1.0
Millimeter
.4
IXFV52N30PS
21.46
16.26
20.32
BSC
7,005,734 B2
7,063,975 B2
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
e
.8
∅ P
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242
Inches
7,157,338B2
Max.
BSC
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216

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