IRFS4229PBF International Rectifier, IRFS4229PBF Datasheet - Page 6

• Manufacturer Part Number: IRFS4229PBF
• Description: MOSFET N-CH 250V 45A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS4229PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 48 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4560pF @ 25V
• Power - Max: 330W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 19a. Unclamped Inductive Test Circuit
Fig 20a. Gate Charge Test Circuit
‚
+
-
D.U.T
R G
20V
V
V DS
GS
1K
Fig 18.
t p
ƒ
+
-
•
•
•
•
I AS
D.U.T
SD
0.01 Ω
L
DUT
•
•
•
L
-
15V
„
G
DRIVER
+
+
-
VCC
V DD
A
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 19b. Unclamped Inductive Waveforms
P.W.
SD
for HEXFET
DS
Waveform
Waveform
I
Fig 20b. Gate Charge Waveform
AS
Vgs(th)
Qgs1 Qgs2
Vds
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
®
Power MOSFETs
dv/dt
Forward Drop
Qgd
di/dt
t p
D =
Qgodr
Period
P.W.
V
(BR)DSS
V
V
I
SD
GS
DD
www.irf.com
=10V
Vgs
Id