IXTC62N15P IXYS, IXTC62N15P Datasheet
IXTC62N15P
Manufacturer Part Number
IXTC62N15P
Description
MOSFET N-CH ISOPLUS-220
Manufacturer
IXYS
Series
PolarHT™r
Datasheet
1.IXTC62N15P.pdf
(2 pages)
Specifications of IXTC62N15P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 31A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2250pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
36
Rds(on), Max, Tj=25°c, (?)
0.045
Ciss, Typ, (pf)
2250
Qg, Typ, (nc)
70
Trr, Typ, (ns)
150
Pd, (w)
150
Rthjc, Max, (k/w)
1.0
Package Style
ISOPLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarHT
MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
F
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
C
DSS
DGR
GS
GSM
AR
AS
D
GS(th)
DS(on)
J
DSS
= 25° C unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting force
Test Conditions
V
V
V
V
V
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ± 20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
Power
, I
D
D
DC
D
= 250 µA
= 250 µA
G
= 31 A, Note 1
, V
= 10 Ω
DS
= 0
ISOPLUS220
ISOPLUS247
ISOPLUS220
ISOPLUS247
GS
= 1 MΩ
DD
T
Preliminary Technical Information
J
≤ V
= 125° C
DSS
JM
IXTC 62N15P
IXTR 62N15P
,
20..120 / 4.5..25
150
Min.
11..65 / 2.5..15
3.0
Characteristic Values
-55 ... +175
-55 ... +150
Maximum Ratings
Typ.
± 20
± 30
150
150
150
150
150
300
1.0
36
50
30
10
± 100
3
5
200
Max.
5.0
10
45
V/ns
N/lb
N/lb
m Ω
mJ
nA
µA
µA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
ISOPLUS220 (IXTC)
ISOPLUS247 (IXTR)
G = Gate
S = Source
Features
l
l
l
l
l
l
Advantages
l
l
l
International standard isolated
UL recognized packages
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
packages
Fast intrinsic diode
Easy to mount
Space savings
High power density
V
I
R
G
D25
DS(on)
DSS
D
G
E153432
E153432
D
S
S
= 150
=
≤ ≤ ≤ ≤ ≤
Isolated back
Isolated back
D = Drain
TAB = Drain
36
45 m Ω Ω Ω Ω Ω
DS99622E(05/06)
surface
surface
A
V
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IXTC62N15P Summary of contents
Page 1
... ± GSS DSS DS DSS Note 1 DS(on © 2006 IXYS All rights reserved Preliminary Technical Information IXTC 62N15P IXTR 62N15P Maximum Ratings 150 = 1 MΩ 150 GS ± 20 ± 150 1.0 ≤ DSS 150 -55 ... +175 150 -55 ... +150 300 11..65 / 2.5..15 20..120 / 4.5..25 ...
Page 2
... IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. ...