STP200NF03 STMicroelectronics, STP200NF03 Datasheet - Page 14

• Manufacturer Part Number: STP200NF03
• Description: MOSFET N-CH 30V 120A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP200NF03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 4950pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.2mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0032 Ohms
• Forward Transconductance Gfs (max / Min): 200 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6738-5; STP200NF03

Package mechanical data
14/18
DIM.
A1
b1
c2
e1
L1
L2
D
A
b
e
E
L
c
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
3.50
1.27
MIN.
10
13
TO-262 (I
mm.
TYP
2
PAK) MECHANICAL DATA
STP200NF03 - STB200NF03 - STB200NF03-1
10.40
MAX.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
3.93
1.40
14
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
MIN.
TYP.
inch
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
MAX.