STP140NF75 STMicroelectronics, STP140NF75 Datasheet

MOSFET N-CH 75V 120A TO-220

STP140NF75

Manufacturer Part Number
STP140NF75
Description
MOSFET N-CH 75V 120A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheets

Specifications of STP140NF75

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.5 mOhm @ 70A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
218nC @ 10V
Input Capacitance (ciss) @ Vds
5000pF @ 25V
Power - Max
310W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0075 Ohms
Forward Transconductance Gfs (max / Min)
160 S
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
310 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
150A
Drain Source Voltage Vds
24V
On Resistance Rds(on)
7.5mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5894-5
STP140NF75

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MAIN PRODUCTS CHARACTERISTICS
FEATURES
DESCRIPTION
Low cost single chip rectifier suited for Switched
Mode Power Supplies and high frequency DC to
DC converters.
Packaged in TO-220AC, TO-220FPAC and
ISOWATT220AC, this device is intended for use in
low voltage, high frequency inverters, free
wheeling and polarity protection applications.
January 2002 - Ed: 3E
Symbol
I
Suited for SMPS
Very low forward losses
Negligible switching losses
High surge current capability
Insulated packages:
ISOWATT220AC / TO-220FPAC
Insulation voltage = 2000V DC
Capacitance = 12pF
V
F(RMS)
I
I
F(AV)
T
FSM
RRM
Tj
stg
trr (max)
V
Tj (max)
F
V
I
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
= 0.5
HIGH EFFICIENCY FAST RECOVERY DIODES
150°C
0.99 V
200 V
30 ns
8 A
Parameter
TO-220AC
ISOWATT220AC
TO-220FPAC
STPR820D
TO-220AC
Tc = 120°C
Tc = 100 C
Tp = 10 ms
Sinusoidal
STPR820D/F/FP
K
TO-220FPAC
STPR820FP
A
- 65 to + 150
ISOWATT220AC
Value
+ 150
200
20
80
STPR820F
8
K
A
K
Unit
°C
V
A
A
A
A
1/6

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STP140NF75 Summary of contents

Page 1

HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCTS CHARACTERISTICS I F(AV) V RRM Tj (max) V (max) F trr (max) FEATURES Suited for SMPS Very low forward losses Negligible switching losses High surge current capability Insulated packages: ISOWATT220AC / TO-220FPAC ...

Page 2

STPR820D/F/FP THERMAL RESISTANCES Symbol Junction to case R th(j-c) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameters Reverse leakage current Forward voltage drop Pulse test : * ms, < ...

Page 3

Fig. 3: Average current temperature. Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values) (TO-220AC). Fig. 7: Relative variation of thermal transient impedance junction to case versus pulse duration (TO-220AC). versus ambient Fig. 4: temperature. Fig. ...

Page 4

STPR820D/F/FP Fig. 9: Forward voltage drop versus forward current. Fig. 11: Recovery charge versus dI Fig. 13: Dynamic parameters versus junction temperature. 4/6 Fig. 10: Junction capacitance versus reverse voltage applied (typical values). /dt. Fig. 12: Peak reverse current versus ...

Page 5

PACKAGE MECHANICAL DATA TO-220AC H2 L5 Ø PACKAGE MECHANICAL DATA ISOWATT220AC REF ...

Page 6

... STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. ...

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