IRFP4229PBF International Rectifier, IRFP4229PBF Datasheet - Page 6

• Manufacturer Part Number: IRFP4229PBF
• Description: MOSFET N-CH 250V 44A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP4229PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 46 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4560pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 44A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 38mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 44 A
• Power Dissipation: 310 W
• Mounting Style: Through Hole
• Gate Charge Qg: 72 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
0

Fig 19a. Unclamped Inductive Test Circuit
Fig 20a. Gate Charge Test Circuit
‚
+
-
D.U.T
R G
20V
V
V DS
GS
1K
Fig 18.
t p
ƒ
+
-
•
•
•
•
I AS
D.U.T
SD
0.01 Ω
L
DUT
•
•
•
L
-
15V
„
G
DRIVER
+
+
-
VCC
V DD
A
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 19b. Unclamped Inductive Waveforms
P.W.
SD
for HEXFET
DS
Waveform
Waveform
I
Fig 20b. Gate Charge Waveform
AS
Vgs(th)
Qgs1 Qgs2
Vds
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
®
Power MOSFETs
dv/dt
Forward Drop
Qgd
di/dt
t p
D =
Qgodr
Period
P.W.
V
(BR)DSS
V
V
I
SD
GS
DD
www.irf.com
=10V
Vgs
Id