STP9NK90Z STMicroelectronics, STP9NK90Z Datasheet - Page 5

• Manufacturer Part Number: STP9NK90Z
• Description: MOSFET N-CH 900V 8A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r
• Type: Power MOSFETr

Specifications of STP9NK90Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.3 Ohm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 2115pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 1.3Ohm
• Drain-source On-volt: 900V
• Gate-source Voltage (max): ±30V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2785-5

STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Table 9.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
Symbol
BV
I
V
SDM
t
t
I
d(on)
d(off)
RRM
I
SD
Q
t
SD
t
t
GSO
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise Time
Turn-off delay time
Fall time
Gate-source breakdown voltage I
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Parameter
Doc ID 9479 Rev 7
V
R
Figure 19
Figure 24
GS
I
I
di/dt = 100 A/µs,
V
Figure 21
DD
SD
SD
G
DD
= 4.7 Ω, V
= ±1 mA(open drain)
Test conditions
Test conditions
Test conditions
= 8 A, V
= 8 A,
= 450 V, I
= 50 V, Tj = 150 °C
GS
GS
D
=0
= 4 A,
= 10 V
Electrical characteristics
Min.
Min.
Min
30
-
-
-
-
-
Typ.
Typ.
950
Typ.
10
21
22
13
55
28
-
Max
Max.
Max.
1.6
32
8
-
-
Unit
Unit
Unit
µC
ns
ns
ns
ns
ns
A
A
V
A
V
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