STP5NK100Z STMicroelectronics, STP5NK100Z Datasheet - Page 3

• Manufacturer Part Number: STP5NK100Z
• Description: MOSFET N-CH 1KV 3.5A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP5NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.7 Ohm @ 1.75A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1154pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.7 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 3.5A
• Drain Source Voltage Vds: 1kV
• On Resistance Rds(on): 3.7ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4382-5

ELECTRICAL CHARACTERISTICS (T
Table 7: On /Off
Table 8: Dynamic
Table 9: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) C
C
V
Symbol
Symbol
Symbol
I
R
oss eq
V
V
SDM
(BR)DSS
g
oss eq.
t
t
I
I
I
C
SD
I
DS(on)
C
GS(th)
C
Q
d(on)
d(off)
Q
fs
RRM
RRM
DSS
GSS
I
Q
Q
Q
SD
t
t
oss
t
t
iss
rss
rr
rr
gs
gd
r
f
(1)
g
rr
rr
(1)
(2)
(3)
is defined as a constant equivalent capacitance giving the same charging time as C
.
Drain-source Breakdown
Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Equivalent Output Capacitance V
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
DS
Parameter
= 0)
GS
= 0)
CASE
I
V
V
T
V
V
V
V
V
V
V
R
(see Figure 21)
V
V
(see Figure 24)
D
I
I
V
(see Figure 22)
I
V
(see Figure 22)
C
DS
DS
GS
DS
GS
DS
DS
GS
GS
DD
DD
GS
G
SD
SD
SD
DD
DD
= 1 mA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= 125°C
= 4.7
= Max Rating
= Max Rating,
= ± 20 V
= V
= 10 V, I
= 15 V , I
= 25 V, f = 1 MHz,
= 0
= 0 V, V
= 500 V, I
= 800 V, I
= 10 V
= 3.5 A, V
= 3.5 A, di/dt = 100 A/µs
= 3.5 A, di/dt = 100 A/µs
= 35V
= 35V, T
Test Conditions
Test Conditions
Test Conditions
GS
STP5NK100Z - STF5NK100Z - STW5NK100Z
, I
V
GS
D
DS
D
D
GS
j
D
D
= 100 µA
GS
= 1.75 A
= 150°C
= 1.75 A
= 0
= 0 to 800 V
= 1.75 A,
= 3.5 A,
= 10 V
= 0
oss
Min.
Min.
1000
Min.
when V
3
DS
1154
Typ.
21.3
46.8
22.5
51.5
21.7
106
7.7
7.3
Typ.
3.09
10.5
11.2
increases from 0 to 80% V
Typ.
19
42
605
742
3.75
4.2
2.7
4
Max.
Max.
Max.
± 10
3.5
1.6
4.5
3.7
59
14
50
1
Unit
Unit
Unit
µA
µA
µA
µC
µC
3/12
ns
ns
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
V
V
A
A
V
A
A
S
DSS
.