STP5NK100Z STMicroelectronics, STP5NK100Z Datasheet - Page 3

• Manufacturer Part Number: STP5NK100Z
• Description: MOSFET N-CH 1KV 3.5A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP5NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.7 Ohm @ 1.75A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1154pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.7 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 3.5A
• Drain Source Voltage Vds: 1kV
• On Resistance Rds(on): 3.7ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4382-5

STP5NK100Z, STF5NK100Z, STW5NK100Z
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
V
Symbol
Symbol
R
dv/dt
Symbol
ESD(G-S)
I
R
P
thj-case
V
DM
V
V
T
SD
E
T
I
I
I
TOT
thj-a
T
ISO
GS
DS
stg
AR
D
D
AS
J
l
(2)
≤ 3.5 A, di/dt ≤ 200 A/µs, V
(3)
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD
(HBM-C=100pF, R=1.5 kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; Tc= 25°C)
Operating junction temperature
Storage temperature
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Absolute maximum ratings
Thermal data
Avalanche characteristics
j
=25 °C, Id=Iar, Vdd=50 V)
Parameter
Parameter
DD
C
≤ V
Doc ID 10850 Rev 5
= 25°C
Parameter
GS
(BR)DSS
JMAX
= 0)
)
C
C
, T
=100°C
= 25°C
j
≤ T
JMAX.
TO-220, TO-247
TO-220, TO-247
125
3.5
2.2
14
1
1
-55 to 150
Value
Value
1000
4000
62.5
± 30
300
4.5
Value
TO-220FP
TO-220FP
250
3.5
3.5
2.2
14
2500
0.24
Electrical ratings
4.2
30
(1)
(1)
(1)
°C/W
°C/W
W/°C
Unit
V/ns
Unit
Unit
°C
°C
mJ
W
V
V
A
A
A
V
V
A
3/15