STI15NM60ND STMicroelectronics, STI15NM60ND Datasheet - Page 8
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STI15NM60ND
Manufacturer Part Number
STI15NM60ND
Description
MOSFET N-CH 600V 14A I2PAK
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheet
1.STP15NM60ND.pdf
(19 pages)
Specifications of STI15NM60ND
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
299 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1250pF @ 50V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.299 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
14 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical characteristics
8/19
Figure 8.
Figure 10. Transconductance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
Output characteristics
STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND
Figure 9.
Figure 11. Static drain-source on resistance
C(pF)
1000
100
10
1
0.1
f= 1 MHz
f= 1 MHz
V
GS
GS
Transfer characteristics
= 0
= 0
1
10
100
HV42710
V
DS
(V)