IXTP160N10T IXYS, IXTP160N10T Datasheet - Page 4

• Manufacturer Part Number: IXTP160N10T
• Description: MOSFET N-CH 100V 160A TO-220
• Manufacturer: IXYS
• Series: TrenchMV™r
• Type: Power MOSFETr

Specifications of IXTP160N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 132nC @ 10V
• Input Capacitance (ciss) @ Vds: 6600pF @ 25V
• Power - Max: 430W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 160 A
• Power Dissipation: 430 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.007Ohm
• Drain-source On-volt: 100V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 160
• Rds(on), Max, Tj=25°c, (?): 0.0070
• Ciss, Typ, (pf): 6600
• Qg, Typ, (nc): 132
• Trr, Typ, (ns): 60
• Trr, Max, (ns): -
• Pd, (w): 430
• Rthjc, Max, (k/w): 0.35
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
200
180
160
140
120
100
300
250
200
150
100
100
80
60
40
20
50
0
0
3.5
0.4
0
0.5
f = 1 MHz
5
4
Fig. 9. Forward Voltage Drop of
0.6
10
T
Fig. 7. Input Admittance
J
4.5
Fig. 11. Capacitance
0.7
= 150ºC
T
- 40ºC
J
Intrinsic Diode
25ºC
= 150ºC
15
V
V
0.8
V
GS
SD
DS
5
- Volts
- Volts
- Volts
0.9
20
5.5
T
J
1
25
= 25ºC
C iss
C oss
C rss
1.1
6
30
1.2
6.5
35
1.3
1.4
40
7
1.00
0.10
0.01
140
120
100
10
80
60
40
20
9
8
7
6
5
4
3
2
1
0
0.0001
0
0
0
V
I
I
D
G
20
DS
= 25A
= 10mA
20
= 50V
Fig. 12. Maximum Transient Thermal
0.001
40
Fig. 8. Transconductance
60
40
Q
Fig. 10. Gate Charge
Pulse Width - Seconds
G
80
- NanoCoulombs
I
D
0.01
Impedance
- Amperes
60
100
T
120
J
= - 40ºC
80
0.1
150ºC
IXTA160N10T
25ºC
IXTP160N10T
140
100
160
1
180
120
200
140
10
220