IRFP2907ZPBF International Rectifier, IRFP2907ZPBF Datasheet - Page 7

MOSFET N-CH 75V 90A TO-247AC

IRFP2907ZPBF

Manufacturer Part Number
IRFP2907ZPBF
Description
MOSFET N-CH 75V 90A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRFP2907ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 mOhm @ 90A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
270nC @ 10V
Input Capacitance (ciss) @ Vds
7500pF @ 25V
Power - Max
310W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Current, Drain
170 A
Gate Charge, Total
180 nC
Package Type
TO-247AC
Polarization
N-Channel
Power Dissipation
310 W
Resistance, Drain To Source On
4.5 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
97 ns
Time, Turn-on Delay
19 ns
Transconductance, Forward
180 S
Voltage, Breakdown, Drain To Source
75 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
170 A
Mounting Style
Through Hole
Gate Charge Qg
180 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFP2907ZPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP2907ZPBF
Manufacturer:
VISHAY
Quantity:
10 000
www.irf.com
1000
100
600
500
400
300
200
100
10
1.0E-05
1
0
Fig 16. Maximum Avalanche Energy
25
0.05
0.10
0.01
Starting T J , Junction Temperature (°C)
Duty Cycle = Single Pulse
50
vs. Temperature
TOP
BOTTOM 1% Duty Cycle
I D = 90A
75
100
Fig 15. Typical Avalanche Current Vs.Pulsewidth
1.0E-04
Single Pulse
125
150
175
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. T
1.0E-03
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 12a, 12b.
T
t
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
av
av =
thJC
D (ave)
jmax
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
= 1/2 ( 1.3·BV·I
I
E
Allowed avalanche Current vs
avalanche
assuming
avalanche losses
av
AS (AR)
= 2DT/ [1.3·BV·Z
1.0E-02
= P
D (ave)
jmax
pulsewidth,
Tj = 25°C due to
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
thJC
tav
jmax
1.0E-01
7
is

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