STF12NM50N STMicroelectronics, STF12NM50N Datasheet - Page 3

MOSFET N-CH 500V 11A TO220FP

STF12NM50N

Manufacturer Part Number
STF12NM50N
Description
MOSFET N-CH 500V 11A TO220FP
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STF12NM50N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
940pF @ 50V
Power - Max
25W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4804-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STF12NM50N
Manufacturer:
ST
Quantity:
15 000
Part Number:
STF12NM50N
Manufacturer:
ST
Quantity:
12 500
Part Number:
STF12NM50N
Manufacturer:
ST
Quantity:
20 000
Part Number:
STF12NM50N,STF25NM50N,F25NM50N,F12NM50,
Manufacturer:
ST
0
Part Number:
STF12NM50ND
Manufacturer:
ST
Quantity:
1 996
Part Number:
STF12NM50ND
Manufacturer:
ST
Quantity:
20 000
Part Number:
STF12NM50NFP
Manufacturer:
ST
0
Part Number:
STF12NM50N��12NM50N��STF13N80K5
Manufacturer:
ST
0
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
Symbol
Symbol
R
R
Symbol
dv/dt
R
I
SD
P
V
DM
thj-case
V
thj-amb
V
T
thj-pcb
E
T
I
I
TOT
I
ISO
T
GS
DS
stg
D
D
AS
AS
J
(2)
l
≤ 11A, di/dt ≤ 400A/µs, V
(3)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s;T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-
case max
Thermal resistance junction-amb
max
Thermal resistance junction-pcb
max
Maximum lead temperature for
soldering purposes
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Ias, Vdd=50V)
Parameter
DD
Parameter
=80%V
C
= 25 °C
Parameter
GS
(BR)DSS
= 0)
C
C
=100 °C
= 25 °C
C
TO-220 I²PAK DPAK D²PAK TO-220FP
=25 °C)
--
62.5
--
1.25
TO-220 / I²PAK
D²PAK / DPAK
50
Value
--
300
100
6.7
11
44
--
-55 to 150
Value
30
--
± 25
150
500
15
Value
350
Electrical ratings
5
TO-220FP
6.7
44
2500
11
62.5
25
--
5
(1)
(1)
(1)
°C/W
°C/W
°C/W
V/ns
Unit
Unit
Unit
°C
°C
°C
mJ
W
V
V
A
A
A
V
A
3/19

Related parts for STF12NM50N