IXTV26N50PS IXYS, IXTV26N50PS Datasheet - Page 4

• Manufacturer Part Number: IXTV26N50PS
• Description: MOSFET N-CH 500V 26A PLUS220-SMD
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTV26N50PS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 400W
• Mounting Type: Surface Mount
• Package / Case: PLUS-220SMD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.23 Ohms
• Forward Transconductance Gfs (max / Min): 31 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 26 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 26
• Rds(on), Max, Tj=25°c, (?): 0.23
• Ciss, Typ, (pf): 3600
• Qg, Typ, (nc): 65
• Trr, Typ, (ns): 300
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: PLUS220 SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
80
70
60
50
40
30
20
10
50
45
40
35
30
25
20
15
10
0
100
10
5
0
0.4
3.5
0
f = 1 MHz
0.5
4
5
Fig. 9. Forward Voltage Drop of
10
0.6
Fig. 7. Input Admittance
4.5
Fig. 11. Capacitance
Intrinsic Diode
T
J
V
V
= 125ºC
15
V
SD
GS
0.7
DS
5
- Volts
C iss
C oss
C rss
T
- Volts
- Volts
J
= 125ºC
20
- 40ºC
25ºC
0.8
5.5
T
25
J
= 25ºC
0.9
6
30
6.5
1
35
1.1
40
7
100
10
50
45
40
35
30
25
20
15
10
1
10
5
0
9
8
7
6
5
4
3
2
1
0
10
0
0
T
R
J
T
T
DS(on)
Fig. 12. Forward-Bias Safe Operating Area
= - 40ºC
V
I
I
J
C
5
125ºC
D
G
5
DS
= 150ºC
= 25ºC
25ºC
= 13A
= 10mA
= 250V
10
Limit
10
IXTV 26N50P IXTV26N50PS
IXTQ 26N50P IXTT 26N50P
15
Fig. 8. Transconductance
15
Fig. 10. Gate Charge
20
Q
20
G
I
- NanoCoulombs
V
D
25
DS
- Amperes
25
- Volts
DC
30
100
30
35
35
40
40
45
45
50
50
55
10ms
25µs
100µs
1ms
55
60
1000
65
60